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参数资料
| 型号： | FSB50250UTD |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 6/10页 |
| 文件大小： | 0K |
| 描述： | MOD SPM 500V 1.1A SPM23-ED |
| 标准包装： | 15 |
| 系列： | SPM™ |
| 类型： | FET |
| 配置： | 3 相 |
| 电流： | 1.1A |
| 电压： | 500V |
| 电压 - 隔离： | 1500Vrms |
| 封装/外壳： | SPM23ED |
These values depend on PWM control algorithm
+15 V
C 1
* Example Circuit : V phase
V DC
P
HIN
LIN
Output
Note
R 5
C 5
VCC
HIN
LIN
COM
V TS
VB
HO
VS
LO
V
N
Inverter
Output
C 3
R 3
0
0
1
1
Open
0
1
0
1
Open
Z
0
V DC
Forbidden
Z
Both FRFET Off
Low side FRFET On
High side FRFET On
Shoot through
Same as (0,0)
One Leg Diagram of Motion SPM 5 Product
10 ? F
C 2
C 4
?
:
* Example of Bootstrap Paramters
C 1 = C 2 = 1 ? F Ceramic Capacitor
Figure 3. Recommended MCU Interface and Bootstrap Circuit with Parameters
3rd Notes:
1. Parameters for bootstrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
2. RC-coupling (R 5 and C 5 ) and C 4 at each input of Motion SPM 5 product and MCU (Indicated as Dotted Lines) may be used to prevent improper signal due to surge-noise.
3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge-voltage. Bypass capacitors such as C 1 , C 2
and C 3 should have good high-frequency characteristics to absorb high-frequency ripple-current.
14.50mm
3.80mm
MOSFET
Case Temperature(Tc)
Detecting Point
Figure 4. Case Temperature Measurement
3rd Notes:
4. Attach the thermocouple on top of the heat-sink of SPM 5 package (between SPM 5 package and heatsink if applied) to get the correct temperature measurement.
?2013 Fairchild Semiconductor Corporation
FSB50250UTD Rev. C4
6
www.fairchildsemi.com
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