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| 型号： | FSBB30CH60F |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 11/14页 |
| 文件大小： | 0K |
| 描述： | IC SMART PWR MODULE SPM27-EA |
| 产品培训模块： | Smart Power |
| 产品变化通告： | Wire Change 06/June/2007 |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 30A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27EA |
+5 V
R PF = 4.7 k ?
SPM
IN (UH) , IN (VH) , IN (WH)
MCU
100 ?
1 nF
C PF = 1 nF
IN (UL) , IN (VL) , IN (WL)
V FO
COM
Figure 9. Recommended MCU I/O Interface Circuit
3rd Notes:
1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed
circuit board. The Motion SPM ? 3 Product input signal section integrates a 3.3 k ? ( typ.) pull-down resistor. Therefore, when using an external filtering resistor, pay attention to
the signal voltage drop at input terminal.
2. The logic input works with standard CMOS or LSTTL outputs.
These values depend on PWM control algorithm.
+15 V
R E(H)
R BS
D BS
One-Leg Diagram of
Motion SPM 3 Product
P
22 μ F
0.1 μ F
Vcc VB
IN HO
COM VS
Vcc
Inverter
Output
1000 μ F
1 μ F
IN
OUT
COM V SL
N
Figure 10. Recommended Bootstrap Operation Circuit and Parameters
3rd Notes:
3. It would be recommended that the bootstrap diode, D BS , has soft and fast recovery characteristics.
4. The bootstrap resistor (R BS ) should be three times greater than R E(H) . The recommended value of R E(H) is 5.6 ? , but it can be increased up to 20 ?? (maximum) for a slower dv/
dt of high-side.
5. The ceramic capacitor placed between V CC - COM should be over 1 ? F and mounted as close to the pins of the Motion SPM 3 product as possible.
?2006 Fairchild Semiconductor Corporation
FSBB30CH60F Rev. C6
11
www.fairchildsemi.com
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| FSBF15CH60BTH | MODULE SPM MOTION CTRL SPM27-JC |
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