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参数资料
| 型号： | FSBB30CH60F |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 6/14页 |
| 文件大小： | 0K |
| 描述： | IC SMART PWR MODULE SPM27-EA |
| 产品培训模块： | Smart Power |
| 产品变化通告： | Wire Change 06/June/2007 |
| 标准包装： | 10 |
| 系列： | SPM™ |
| 类型： | IGBT |
| 配置： | 3 相 |
| 电流： | 30A |
| 电压： | 600V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | SPM27EA |
Electrical Characteristics (T J = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V CE(SAT)
Collector - Emitter
V CC = V BS = 15 V
I C =30 A, T J = 25°C
-
-
2.75
V
Saturation Voltage
V IN = 5 V
V F
FWDi Forward Voltage
V IN = 0 V
I C =30 A, T J = 25°C
-
-
2.4
V
HS
t ON
t C(ON)
t OFF
Switching Times
V PN = 300 V, V CC = V BS = 15 V
I C = 30 A
V IN = 0 V ? 5 V, Inductive Load
(2nd Note 3)
-
-
-
0.49
0.34
0.86
-
-
-
? s
? s
? s
t C(OFF)
t rr
-
-
0.52
0.10
-
-
? s
? s
LS
t ON
t C(ON)
t OFF
t C(OFF)
t rr
V PN = 300 V, V CC = V BS = 15 V
I C = 30 A
V IN = 0 V ? 5 V, Inductive Load
(2nd Note 3)
-
-
-
-
-
0.68
0.47
0.90
0.50
0.10
-
-
-
-
-
? s
? s
? s
? s
? s
I CES
Collector - Emitter
V CE = V CES
-
-
250
? A
Leakage Current
2nd Notes:
3. t ON and t OFF include the propagation delay of the internal drive IC. t C(ON) and t C(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
100% I C 100% I C
t rr
V IN
t ON
V CE
t C(ON)
I C
V IN
t OFF
I C
t C(OFF)
V CE
V IN(ON)
10% I C 90% I C 10% V CE
V IN(OFF)
10% V CE
10% I C
(a) turn-on
(b) turn-off
Figure 4. Switching Time Definition
?2006 Fairchild Semiconductor Corporation
FSBB30CH60F Rev. C6
6
www.fairchildsemi.com
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