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参数资料
| 型号： | FSEZ1016AMY |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 11/16页 |
| 文件大小： | 0K |
| 描述： | IC PWM PRIMARY REG MOSFET 7-SOIC |
| 标准包装： | 1 |
| 系列： | EZSWITCH™ EZ™ |
| 输出隔离： | 隔离 |
| 频率范围： | 40kHz ~ 46kHz |
| 输入电压： | 5.5 V ~ 25 V |
| 功率（瓦特）： | 660mW |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽）7 引线 |
| 供应商设备封装： | 7-SOIC |
| 包装： | 标准包装 |
| 其它名称： | FSEZ1016AMYDKR |
Temperature Compensation
Built-in temperature compensation provides constant
voltage regulation over a wide range of temperature
variation. This internal compensation current
compensates the forward-voltage drop variation of the
secondary-side rectifier diode.
Green-Mode Operation
The FSEZ1016A uses voltage regulation error amplifier
output (V COMV ) as an indicator of the output load and
modulates the PWM frequency, as shown in Figure 26,
such that the switching frequency decreases as load
Gate Drive Signal
t s
t s
t s
decreases. In heavy-load conditions, the switching
frequency is fixed at 43 KHz. Once V COMV decreases
below 2.8 V, the PWM frequency starts to linearly
decrease from 43 KHz to 550 Hz to reduce the
switching losses. As V COMV decreases below 0.8 V, the
switching frequency is fixed at 550 Hz and FSEZ1016A
enters “deep green” mode, where the operating current
drops to 1 mA, reducing the standby power
consumption.
45.6kHz
43 . 0kHz
40 . 4kHz
f s
Swi tching Frequen cy
3ms
t
Figure 27. Frequency Hopping
43kH z
Startup
Figure 28 shows the typical startup circuit and
transformer auxiliary winding for a FSEZ1016A
application. Before FSEZ1016A begins switching, it
consumes only startup current (typically 10 μ A) and the
current supplied through the startup resistor charges the
550H z
Dee p
Green
Mode
0.8V
Green Mode
No rmal Mode
2.8V
V COMV
V DD capacitor (C DD ). When V DD reaches turn-on voltage
of 16 V (V DD-ON ), FSEZ1016A begins switching, and the
current consumed increases to 3.5 mA. Then, the power
required for FSEZ1016A is supplied from the
transformer auxiliary winding. The large hysteresis of
V DD provides more hold-up time, which allows using a
small capacitor for V DD .
Figure 26. Switching Frequency in Green Mode
Leading-Edge Blanking (LEB)
At the instant the MOSFET is turned on, there is a high-
current spike through the MOSFET, caused by primary-
side capacitance and secondary-side rectifier reverse
recovery. Excessive voltage across the R CS resistor can
lead to premature turn-off of the MOSFET. FSEZ1016A
employs an internal leading-edge blanking (LEB) circuit
to inhibit the PWM comparator for a short time after the
MOSFET is turned on. External RC filtering is not required.
Frequency Hopping
EMI reduction is accomplished by frequency hopping,
which spreads the energy over a wider frequency range
than the bandwidth measured by the EMI test
equipment. FSEZ1016A has an internal frequency-
hopping circuit that changes the switching frequency
between 40.4 kHz and 45.6 kHz with a period of 3 ms,
as shown in Figure 27.
? 2009 Fairchild Semiconductor Corporation
FSEZ1016A ? Rev. 1.0.3
11
Figure 28. Startup Circuit
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FSEZ1016ANY | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FSEZ1016ASY | 制造商:Fairchild Semiconductor Corporation 功能描述:PRIMARY SIDE REGULATION PWM WITH POWER MOSFET INTEGRATED - Rail/Tube |
| FSEZ1216 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Primary-Side-Regulation PWM Integrated Power MOSFET |
| FSEZ1216_09 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Primary-Side-Regulation PWM Integrated Power MOSFET |
| FSEZ1216B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Primary-Side-Regulation PWM Integrated Power MOSFET |
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