参数资料
| 型号： | FSEZ1216BNY |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/15页 |
| 文件大小： | 0K |
| 描述： | IC PWM CTLR MOSFET 8-DIP |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 59 |
| 输出隔离： | 隔离 |
| 频率范围： | 39kHz ~ 45kHz |
| 输入电压： | 5.5 V ~ 25 V |
| 输出电压： | 600V |
| 功率（瓦特）： | 800mW |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 产品目录页面： | 1222 (CN2011-ZH PDF) |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
DC Supply Voltage
Symbol
V VDD
V VS
V CS
V COMV
V COMI
V DS
I D
I DM
E AS
I AR
P D
R θ JA
R θ JC
T J
T STG
Parameter
(1,2)
VS Pin Input Voltage
CS Pin Input Voltage
Voltage-Error Amplifier Output Voltage
Voltage-Error Amplifier Output Voltage
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single-Pulse Avalanche Energy
Avalanche Current
Power Dissipation (T A ＜ 50°C)
Thermal Resistance (Junction-to-Air)
Thermal Resistance (Junction-to-Case)
Operating Junction Temperature
Storage Temperature Range
T C =25°C
T C =100°C
Min.
-0.3
-0.3
-0.3
-0.3
-55
Max.
30
7.0
7.0
7.0
7.0
600
1
0.6
4
33
1
800
113
67
+150
+150
Unit
V
V
V
V
V
V
A
A
A
mJ
A
mW
°C/W
°C/W
°C
°C
T L
ESD
Lead Temperature (Wave Soldering or IR, 10 Seconds)
Electrostatic Discharge Capability, Human Body Model,
JEDEC: JESD22-A114
Electrostatic Discharge Capability, Charged Device
Model, JEDEC: JESD22-C101
+260
3.0
1000
°C
KV
V
Notes:
1. Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.
2. All voltage values, except differential voltages, are given with respect to GND pin.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
T A
Parameter
Operating Ambient Temperature
Min.
-40
Typ.
Max.
+105
Unit
°C
? 2008 Fairchild Semiconductor Corporation
FSEZ1216B Rev. 1.0.0
4
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FSEZ1216NY | IC PWM PRIMARY REG MOSFET 8-DIP |
| FSEZ1307MY | IC PWM CTLR PRIMARY REG 7-SOIC |
| FSEZ1317AMY | IC PWM CTLR PRIMARY REG 7-SOIC |
| FSEZ1317NY | IC PWM CTLR PRIMARY REG 7-DIP |
| FSEZ1317WAMY | IC CTLR PSR/PWM 7-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FSEZ1216NY | 功能描述:MOSFET Primary Side Reg. PWM Integrated Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FSEZ1216NY_SN00026 | 功能描述:电源开关 IC - 配电 Primary-side-contr. PWM Integrated RoHS:否 制造商:Exar 输出端数量:1 开启电阻（最大值）:85 mOhms 开启时间（最大值）:400 us 关闭时间（最大值）:20 us 工作电源电压:3.2 V to 6.5 V 电源电流（最大值）: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23-5 |
| FSEZ1217BNY | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FSEZ1307 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Primary-Side-Regulation PWM with Power MOSFET Integrated |
| FSEZ1307MY | 功能描述:IC PWM CTLR PRIMARY REG 7-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - AC-DC 转换器，离线开关 系列:- 标准包装:3,000 系列:- 输出隔离:隔离 频率范围:61kHz ~ 71kHz 输入电压:9.4 V ~ 28 V 输出电压:12V 功率（瓦特）:- 工作温度:-40°C ~ 125°C 封装/外壳:SC-74，SOT-457 供应商设备封装:6-TSOP 包装:带卷 (TR) |
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