参数资料
型号: FSQ100
厂商: Fairchild Semiconductor
文件页数: 5/12页
文件大小: 0K
描述: IC SWIT PWM GREEN OVP HV 8DIP
标准包装: 50
输出隔离: 隔离
频率范围: 61 ~ 73kHz
输入电压: 8 V ~ 20 V
输出电压: 650V
功率(瓦特): 8W
工作温度: 25°C ~ 145°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-DIP
包装: 管件
Electrical Characteristics
T A = 25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
SenseFET Section
I DSS
Zero-Gate-Voltage Drain Current
V DS =650V, V GS =0V
V DS =520V, V GS =0V, T C =125 ? C
25
200
μA
R DS(ON)
Drain-Source On-State Resistance (5)
V GS =10V, I D =0.5A
16
22
?
g fs
Forward Trans-Conductance
V DS =50V, I D =0.5A
1.0
1.3
S
C ISS
Input Capacitance
162
C OSS
C RSS
Output Capacitance
Reverse Transfer Capacitance
V GS =0V, V DS =25V, f=1MHz
18
3.8
pF
Control Section
Switching Frequency Variation
f OSC
Δ f OSC
D MAX
Switching Frequency
Maximum Duty Cycle
(6)
-25°C ≤ T A ≤ 85°C
61
60
67
±5
67
73
±10
74
kHz
%
%
V START
V STOP
I FB
t S/S
UVLO Threshold Voltage
Feedback Source Current
Internal Soft Start Time
V FB =GND
V FB =GND
0V ≤ V FB ≤ 3V
8
6
0.35
10
9
7
0.40
15
10
8
0.45
20
V
V
mA
ms
Burst Mode Section
V BURH
V BURL
Burst Mode Voltage
T J =25°C
0.6
0.45
0.7
0.55
0.8
0.65
V
V
V BUR(HYS)
Hysteresis
150
mV
Protection Section
I LIM
T SD
V SD
V OVP
Peak Current Limit
Thermal Shutdown Temperature (7)
Shutdown Feedback Voltage
Over-Voltage Protection
0.475
125
4.0
20
0.550
145
4.5
0.650
5.0
A
°C
V
V
I DELAY
Shutdown Delay Current
3V ≤ V FB ≤ V SD
4
5
6
μA
Total Device Section
I OP
Operating Supply Current (8)
V CC ≤ 16V
1.5
3.0
mA
I CH
Startup Charging Current
V CC =0V , V STR =50V
450
550
650
μA
Notes:
5. Pulse test: Pulse width ≤ 300μs, duty ≤ 2%.
6. These parameters, although guaranteed, are tested in EDS (wafer test) process.
7. These parameters, although guaranteed, are not 100% tested in production.
8. Control part only.
? 2007 Fairchild Semiconductor Corporation
FSQ100 Rev. 1.0.2
5
www.fairchildsemi.com
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