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参数资料
| 型号： | G10518-54 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode with preamp |
| 中文描述： | 铟镓砷PIN光电二极管和前置放大器 |
| 文件页数： | 1/2页 |
| 文件大小： | 315K |
| 代理商： | G10518-54 |
PHOTODIODE
InGaAs PIN photodiode with preamp
ROSA type, 1.3 m, 10 Gbps
G10518-51/-54
Features
Applications
l φ1.25 mm (G10518-54)/ φ2.5 mm (G10518-51)
sleeve type ROSA (Receiver Optical Sub-Assembly)
l High-speed response: 10.7 Gbps
l Low power supply voltage: Vcc=Vpd=3.3 V
l Differential output
l Sensitivity: +3 to -19.5 dBm Typ.
l Trans-impedance: 6 k Typ. (single-ended)
l SDH/SONET, 10 gigabit ethernet
l Optical fiber communications
PRELIMINARY DATA
May 2007
1
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Supply voltage
Vcc
-0.5 Min, +3.7 Max
V
Reverse voltage (photodiode)
VR
7
V
Operating temperature
(case temperature)
Topr
-20 to +85
°C
Storage temperature
Tstg
-40 to +85
°C
s Electrical and optical characteristics (Ta=25 °C, Vcc=3.05 to 3.53 V, Vpd=3.05 to 5.0 V, RL=50
*2,
unless otherwise noted)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Responsivity
R
λ=1.31 m
0.70
0.80
-
A/W
Supply current
Icc
Dark state, RL=
∞
-
32
45
mA
Cut-off frequency
fc
λ=1.31 m, -3 dB
6.5
8.0
-
GHz
Low cut-off frequency
fc-L
λ=1.31 m, -3 dB
-
10
50
kHz
Noise equivalent power *
1
NEP
Dark state, DC to 7.5 GHz
-
1.1
2.2
Wrms
Trans-impedance *
1
Tz
f=100 MHz
4
6
-
k
Minimum receivable sensitivity
Pmin
-
-19.5
-17.5
dBm
Maximum receivable sensitivity
Pmax
10 Gbps, NRZ,
λ=1.31 m
PRBS=2
31-1, BER=10-12
Extinction ratio=14 dB
+2
+3
-
dBm
Output amplitude
Vomax
300
450
650
mVpp
Dark current
ID
Dark state, RL=
∞
-
0.05
0.5
nA
Optical return loss
ORL
λ=1.31 m
12
14
-
dB
*1: Single-ended (Vout+) measurement
*2: Capacitive coupling
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