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参数资料
| 型号： | G150SPBK06P3H |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 封装： | HERMETIC SEALED, PLASTIC, INT-A-PAK 3, 7 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 138K |
| 代理商： | G150SPBK06P3H |
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G150SPBK06P3H
Static Characteristics
Module
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
RI
Insulation Resistance
From all Pins to Case, V = 500VDC
10
-
M
IGBT
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICES
Collector Current
VCE = VCES, VGE = 0V
--
1.0
mA
IGES
Gate Leakage Current
VGE = VGES, VCE = 0V
-
10
A
VGE(th) Gate-Emitter Threshold Voltage
IC = 15mA, VCE = 10V
4.0
5.4
8.1
IC = 150A, VGE = 15V
-
2.3
2.6
V
IC = 75A, VGE = 15V
-1.8
2.1
Diode
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Bridge Diodes, IE = 150A, VGE = 0V
-1.8
2.1
Regen Diodes, IE = 50A, VGE = 0V
-
2.4
SCR
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
IRRM
Max. Peak Reverse Leakage Current VRRM = 600V
-
15
IDRM
Max. Peak Off-state Leakage Current VDRM = 600V
--
15
IF = 100A
-
1.35
IF = 50A
--
1.15
IH
Holding Current
DC Method, Bias Condition C
-
200
300
mA
Dynamic Characteristics
IGBT
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
QG
Total Gate Charge
VCC = 300V, IC = 150A, VGE = 15V
-
1600
nC
td(on)
Turn On Delay Time
VCC = 300V, IC = 150A
--
1200
ns
tr
Rise Time
VGE1 = VGE2 = 15V
-
850
ns
td(off)
Turn Off Delay Time
RG = 20, Turn-on
--
2.1
s
tf
Fall Time
RG = 10, Turn-off
-
300
ns
Diode
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
trr
Diode Reverse Recovery Time
IE = 150A, di/dt = 300A/s Min
-
170
ns
Qrr
Diode Reverse Recovery Charge
Bridge Diodes only
-
9.0
C
VCE(sat) Collector-Emitter Saturation Voltage
Forward On-state Voltage
VFM
Diode Forward Voltage
V
mA
VTM
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