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参数资料
| 型号： | G1747 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 镓砷磷光电二极管 |
| 文件页数： | 1/4页 |
| 文件大小： | 134K |
| 代理商： | G1747 |
Features
l Low dark current
l Extended red sensitivity
l High UV sensitivity
Applications
l Analytical instrument
l Color identification
l UV detection
PHOTODIODE
GaAsP photodiode
Schottky type with extended red sensitivity
G1746, G1747
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
Material *
Package
(mm)
(mm2)
(V)
(°C)
G1746
/Q
TO-5
2.3 × 2.3
5.2
G1747
/Q
TO-8
4.6 × 4.6
21
5
-10 to +60
-20 to +70
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
λ
Peak
sensi-
tivity
wave-
length
λp
Short circuit
current
Isc
100 lx
Dark
current
ID
Max.
Temp.
coefficient
of
ID
TCID
Rise time
tr
VR=0 V
RL=1 k
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
Type No.
(nm) (nm)
λp
Hg
line
254 nm
GaP
LED
560 nm
He-Ne
laser
633 nm Min.
(A)
Typ.
(A)
V4=10 mV
(pA)
V4=1 V
(pA) (times/°C) (s)
(pF)
Min.
(G)
Typ.
(G) (W/Hz1/2)
G1746
0.5 0.65 10
100
3
1600
1
8
6.5 × 10-15
G1747
190 to 760 710 0.22 0.02 0.18 0.2
1.8 2.4
20
200
1.07
12
6000
0.5 2.5 1.2 × 10-14
* Window material Q: quartz glass
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