参数资料
型号: G1747
厂商: Hamamatsu Photonics
英文描述: GaAsP photodiode
中文描述: 镓砷磷光电二极管
文件页数: 3/4页
文件大小: 134K
代理商: G1747
GaAsP photodiode
G1746, G1747
PHOTOSENSITIVE
SURFACE
CONNECTED
TO CASE
20
4.1
±
0.2
2.9
0.45
LEAD
8.1 ± 0.1
WINDOW
5.9 ± 0.1
9.1 ± 0.2
5.08 ± 0.2
AMBIENT TEMPERATURE (C)
(Typ. VR=10 mV)
SHUNT
RESISTANCE
020
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
G1746
G1747
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT
CURRENT
(A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
Refer to NEP value in characteristic table.
RL=100
G1746
s
Dimensional outlines (unit: mm)
KGPDA0006EA
s
Shunt resistance vs. ambient temperature
KGPDB0043EA
s
Short circuit current linearity
KGPDB0008EA
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