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参数资料
| 型号： | G2119 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 镓砷磷光电二极管 |
| 文件页数： | 3/4页 |
| 文件大小： | 170K |
| 代理商： | G2119 |
GaAsP photodiode
G1126-02, G1127-02, G2119
G1126-02
s
Dimensional outlines (unit: mm)
KGPDA0006EA
20
4.1
±
0.2
2.9
0.45
LEAD
8.1 ± 0.1
WINDOW
5.9 ± 0.1
PHOTOSENSITIVE
SURFACE
9.1 ± 0.2
5.08 ± 0.2
CONNECTED
TO CASE
G1127-02
15
5.0
±
0.2
1.9
0.45
LEAD
12.35 ± 0.1
13.9 ± 0.2
7.5 ± 0.2
WINDOW
10.5 ± 0.1
PHOTOSENSITIVE
SURFACE
MARK ( 1.4)
CONNECTED
TO CASE
KGPDA0007EA
s
Shunt resistance vs. ambient temperature
KGPDB0038EA
s
Short circuit current linearity
KGPDB0008EA
AMBIENT TEMPERATURE (C)
(Typ. VR=10 mV)
SHUNT
RESISTANCE
020
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
G1127-02
G1126-02
G2119
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT
CURRENT
(A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
DEPENDENT ON NEP
RL=100
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