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参数资料
| 型号： | G5645 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 镓砷磷光电二极管 |
| 文件页数： | 1/4页 |
| 文件大小： | 148K |
| 代理商： | G5645 |
Features
l Low dark current
l Narrow spectral response range
Applications
l Analytical instruments
l UV detection
PHOTODIODE
GaAsP photodiode
Short-wavelength type photodiode
Diffusion type
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active area
size
Effective
active
area
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
Package
(mm)
(mm2)
(V)
(°C)
G5645
/K
TO-18
G5842
Plastic
G6262
Plastic
G7189
/R
Plastic
0.8 × 0.8
0.58
5
-30 to +80
-40 to +85
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Short circuit
current
Isc
1000 lx
Dark
current
ID
VR=5 V
Max.
Temp.
coefficient
of
ID
TCID
Rise time
tf
VR=0 V
RL=1 k
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
Type No.
(nm)
λp
GaP
LED
560 nm
Min.
(nA)
Typ.
(nA)
(pA)
(times/°C)
(s)
(pF)
Min.
(G)
Typ.
(G)(W/Hz1/2)
G5645
300 to 580 470
0.28
0.05
60
90
2.3 × 10-15
G5842
260 to 400 370
0.06
-
2
7.6 × 10-15
G6262
280 to 580 470
0.2
0.05
45
65
2.3 × 10-15
G7189
300 to 580 470
0.25
0.02
45
65
50
1.07
3
80
10
80
2.3 × 10-15
* Window material K: borosilicate glass, R: resin coating
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