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参数资料
| 型号： | G5645 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 镓砷磷光电二极管 |
| 文件页数： | 3/4页 |
| 文件大小： | 148K |
| 代理商： | G5645 |
GaAsP photodiode
Diffusion type
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT
CURRENT
(A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
Refer to NEP value in characteristic table.
RL=100
Borosilicate glass window may extend
a maximum of 0.1 mm beyond the upper
surface of the cap.
CONNECTED
TO CASE
14
2.4
3.55
±
0.2
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
WINDOW
3.0 ± 0.2
0.45
LEAD
(3.4)
6.5 ± 0.2
1.25 ± 0.25
2.54
ACTIVE AREA
(3
×)
0.5
4.0
0.65
0.1
+
0.2 -0.1
0.85
0.2
3.2
(FILTER)
4.0
3.2
(FIL
TER)
1.5
N/C
CATHODE
ANODE
PHOTOSENSITIVE
SURFACE
s
Short circuit current linearity
KGPDB0008EA
G5645
s
Dimensional outlines (unit: mm)
KGPDA0012EA
G5842, G6262
KGPDA0004EA
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