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参数资料
| 型号： | G8423-05 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | Aluminum Snap-In Capacitor; Capacitance: 68uF; Voltage: 450V; Case Size: 20x25 mm; Packaging: Bulk |
| 中文描述： | 铟镓砷PIN光电二极管 |
| 文件页数： | 2/4页 |
| 文件大小： | 260K |
| 代理商： | G8423-05 |
InGaAs PIN photodiode
G8423/G8373/G5853 series
2
WAVELENGTH (m)
(Typ.)
PHOTO
SENSITIVITY
(A/W)
1.4
1.2
1.0
0.8
0
0.2
0.4
1.4
1.2
1.0
0.8
0.6
1.6
1.8 2.0
2.4
2.6
2.2
2.8
T= -10 C
T= -20 C
T=25 C
G8373-03
G8373-01
G8423-03
G8423-05
100
A
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK
CURRENT
10
A
100 nA
1
A
1 mA
(Typ. Ta=25
C)
10
A
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK
CURRENT
1
A
10 nA
100 nA
100
A
(Typ.)
G5853-23 (T= -20 C)
G5853-11 (T= -10 C)
G5853-21 (T= -20 C)
G5853-103 (T= -10 C)
G5853-203 (T= -20 C)
G5853-13 (T= -10 C)
1 nF
0.1
1
10
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
100 pF
10 pF
10 nF
(Typ. Ta=25 C, f=1 MHz)
G8373-03
G5853-13/-23
G8423-05
G8373-01
G5853-11/-21
G8423-03
G5853-103/-203
100 k
-40
-20
0
20
40
60
80
90
100
ELEMENT TEMPERATURE (C)
SHUNT
RESISTANCE
10 k
1 k
10
100
1 M
(Typ. VR=10 mV)
G8423-03
G5853-103/-203
G8423-05
G8373-01
G5853-11/-21
G8373-03
G5853-13/-23
1
0.8
1.6
2
2.2
2.6
WAVELENGTH (m)
TEMPERATURE
COEFFICIENT
(%/
C)
-1
(Typ.)
1.2
1.4
1.8
2.4
0
1
2
s Spectral response
KIRDB0216EA
s Photo sensitivity temperature characteristic
KIRDB0206EA
s Dark current vs. reverse voltage
KIRDB0238EA
KIRDB0218EA
s Terminal capacitance vs. reverse voltage
KIRDB0239EA
s Shunt resistance vs. element temperature
KIRDB0240EA
Non-cooled type
TE-cooled type
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| G8522 | Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 180V; Case Size: 25x40 mm; Packaging: Bulk |
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| G8522-03 | Aluminum Snap-In Capacitor; Capacitance: 120uF; Voltage: 420V; Case Size: 25x25 mm; Packaging: Bulk |
| G8605 | Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 420V; Case Size: 25x30 mm; Packaging: Bulk |
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