参数资料
型号: GB05XP120KT
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: IGBT 晶体管
英文描述: 12 A, 1200 V, N-CHANNEL IGBT
封装: MTP, 13 PIN
文件页数: 1/12页
文件大小: 193K
代理商: GB05XP120KT
GB05XP120K
Bulletin I27168 Rev.E 10/03
Three Phase Inverter Module in MTP Package
1200V NPT IGBT & Hexfredtm Diodes
Absolute Maximum Ratings
VCES
Collector-to-Emitter Voltage
1200
V
IC
Continuos Collector Current
@ TC = 25°C
12
A
@ TC = 100°C
5
ICM
Pulsed Collector Current
24
ILM
Peak Switching Current
24
IF
Diode Continuous Forward Current
@ TC = 100°C
5
IFM
Peak Diode Forward Current
12
VGE
Gate-to-Emitter Voltage
± 20
V
VISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
PD
Maximum Power Dissipation
@ TC = 25°C
76
W
(including diode and IGBT)
@ TC = 100°C
31
Parameters
Max
Units
Gen. 5 NPT 1200V IGBT Technology
HEXFREDTMDiodewithUltraSoft
ReverseRecovery
Very Low Conduction and Switching Losses
Optional SMT Thermistor (NTC)
Aluminum Oxide DBC
Very Low Stray Inductance Design for
HighSpeedOperation
Short Circuit 10S
SquareRBSOA
Features
Optimized for Inverter Motor Drive Applications
Operating Frequencies up to 20 kHz
Low EMI, requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal Resistance
Benefits
VCES = 1200V
IC = 5A, TC=100°C
tsc > 10s, TJ=150°C
VCE(on) typ. = 2.90V
MMTP
Document Number: 93912
www.vishay.com
1
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