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参数资料
| 型号： | GB05XP120KT |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 12 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MTP, 13 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 193K |
| 代理商： | GB05XP120KT |
GB05XP120K
Bulletin I27168 Rev.E 10/03
Qg
Total Gate Charge (turn-on)
-
27
41
IC = 6A
Qge
Gate-Emitter Charge (turn-on)
-
3.7
5.6
nC
VCC = 600V
Qgc
Gate-Collector Charge (turn-on)
-
14
21
VGE = 15V
Eon
Turn-On Switching Loss
-
606
909
IC =6A, VCC = 600V, VGE = 15V
Eoff
Turn-Off Switching Loss
-
340
510
J
Rg = 10, L = 2.0mH, TJ = 25°C
Etot
Total Switching Loss
-
946 1420
Energy losses include tail & diode reverse recovery
Eon
Turn-On Switching Loss
-
779 1170
IC =6A, VCC = 600V, VGE = 15V
Eoff
Turn-Off Switching Loss
-
403
605
J
Rg =10, L = 2.0mH, TJ = 125°C
Etot
Total Switching Loss
-
1182 1775
Energy losses include tail & diode reverse recovery
td(on)
Turn-On Delay Time
-
47
71
IC =6A, VCC = 600V, VGE = 15V
tr
Rise Time
-
17
26
ns
L = 2.0mH, LS= 100nH
td(off)
Turn-off delay Time
-
99
150
Rg =10, TJ = 125°C
tf
Fall time
-
362
543
RBSOA
Reverse BIAS Safe Operating Area
FULL SQUARE
Tj = 150°C IC = 24A
RG = 10 VGE = 15V to 0
SCSOA
Schort Circuit Safe Operating Area
10
-
s
VCC = 600V, VGE = +15V to 0
TJ = 150°C, VP = 1200V, RG = 10
Cies
Input Capacitance
-
369
554
VGE = 0
Coes
Output Capacitance
-
244
366
pF
VCC = 30V
Cres
Reverse Transfer Capacitance
-
12
18
f = 1.0 MHz
Erec
Diode Reverse Recovery Energy
-
334
-
J
IC =6A, VCC = 600V, VGE = 15V
trr
Diode Reverse Recovery Time
-
54
-
ns
L = 2mH, LS= 100nH
Irr
Diode Peak Reverse Current
-
17
-
A
Rg = 10, TJ = 125°C
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
-
V
VGE = 0, IC = 250A
V(BR)CES/TJ Temperature coeff of V(BR)CES
-
1.14
-
V/°C VGE = 0, IC = 1mA (25°C - 125°C)
VCE(on)
Collector-to-Emitter Voltage
-
2.90 3.17
V
VGE = 15V, IC = 6A
-
4.04 4.46
VGE = 15V, IC = 12A
-
3.45 3.60
VGE = 15V, IC = 6A, TJ = 125°C
-
5.07 5.32
VGE = 15V, IC = 12A, TJ = 125°C
VGE(th)
Gate Threshold Voltage
4
-
6
IC = 250A
VGE(th)/TJ Threshold Voltage Temp.Coefficient
-
- 10
-
mV/°C VCE = VGE, IC = 1mA (25°C - 125°C)
gfe
Forward Transconductance
-
3.2
-
S
VCE = 25V, IC = 6A
ICES
Collector-to-Emiter Leaking Current
-
250
A
VGE = 0, VCE = 1200V
-
1000
VGE = 0, VCE = 1200V, TJ = 125°C
VFM
Diode Forward Voltage Drop
-
2.33 2.77
V
IF = 6A, VGE = 0
-
3.01 3.63
IF = 12A, VGE = 0
-
2.55 2.98
IF = 6A, VGE = 0, TJ = 125°C
-
3.45 4.07
IF = 12A, VGE = 0, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
-
± 250 nA
VGE = ± 20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Document Number: 93912
www.vishay.com
2
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