参数资料
型号: GBJ2006-F
厂商: DIODES INC
元件分类: 参考电压二极管
英文描述: 20A GLASS PASSIVATED BRIDGE RECTIFIER
中文描述: 20 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
封装: ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN
文件页数: 1/3页
文件大小: 73K
代理商: GBJ2006-F
e3
DS21220 Rev. 8 - 2
1 of 3
GBJ20005-GBJ2010
www.diodes.com
Diodes Incorporated
Features
GBJ20005 - GBJ2010
20A GLASS PASSIVATED BRIDGE RECTIFIER
GBJ
Dim
Min
Max
A
29.70
30.30
B
19.70
20.30
C
17.00
18.00
D
3.80
4.20
E
7.30
7.70
G
9.80
10.20
H
2.00
2.40
I
0.90
1.10
J
2.30
2.70
K
3.0 X 45°
L
4.40
4.80
M
3.40
3.80
N
3.10
3.40
P
2.50
2.90
R
0.60
0.80
S
10.80
11.20
All Dimensions in mm
_
B
C
D
EE
G
H
K
J
I
L
M
N
P
R
S
A
Characteristic
Symbol
GBJ
20005
GBJ
2001
GBJ
2002
GBJ
2004
GBJ
2006
GBJ
2008
GBJ
2010
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Forward Rectified Output Current
@ TC = 110°C
IO
20
A
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
240
A
Forward Voltage per element
@ IF = 10A
VFM
1.05
V
Peak Reverse Current
@ TA = 25°C
at Rated DC Blocking Voltage
@ TC = 125°C
IR
10
500
A
I2t Rating for Fusing (t < 8.3 ms) (Note 1)
I2t
240
A2s
Typical Total Capacitance per Element (Note 2)
CT
60
pF
Typical Thermal Resistance Junction to Case (Note 3)
RqJC
0.8
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Case: GBJ
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Plated Leads, Solderable per MIL-STD-202,
Method 208
Lead Free Plating (Tin Finish).
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Marking: Type Number
Weight: 6.6 grams (approximate)
Mechanical Data
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 240A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component
Index, File Number E94661
Lead Free Finish/RoHS Compliant (Note 4)
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Unit mounted on 300 x 300 x 1.6mm Cu plate heat sink.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
相关PDF资料
PDF描述
GBPC15-02W BRIDGE RECTIFIER DIODE
GC4275-30 70 V, SILICON, PIN DIODE
GC4310-85 100 V, SILICON, PIN DIODE
GC4750-42 250 V, SILICON, PIN DIODE
GC9904-TCC-129B SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
相关代理商/技术参数
参数描述
GBJ2006TB 功能描述:BRIDGE RECT 1PHASE 600V 20A GBJ 制造商:smc diode solutions 系列:- 包装:剪切带(CT) 零件状态:在售 二极管类型:单相 技术:标准 电压 - 峰值反向(最大值):600V 电流 - 平均整流(Io):20A 不同 If 时的电压 - 正向(Vf:1.1V @ 20A 不同?Vr 时的电流 - 反向漏电流:5μA @ 600V 工作温度:-55°C ~ 150°C(TJ) 安装类型:通孔 封装/外壳:4-ESIP 供应商器件封装:GBJ 标准包装:15
GBJ2007 制造商:UNIOHM 制造商全称:UNIOHM 功能描述:SINGLE PHASE 20.0 AMP BRIDGE RECTIFIERS
GBJ2008 功能描述:桥式整流器 20A 800V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
GBJ2008-BP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Rectifier Bridge Single 800V 20A 4-Pin(4+Tab) GBJ Bulk
GBJ2008-F 功能描述:桥式整流器 20A 800V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube