参数资料
型号: GBJ808
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 桥式整流
英文描述: 2.9 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
封装: PLASTIC, GBJ, 4 PIN
文件页数: 3/3页
文件大小: 93K
代理商: GBJ808
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GBJ804 thru GBJ810
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm
the latest product information and specifications before final design, purchase or
use.
LSC makes no warranty, representation or guarantee regarding the suitability of
its products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any
unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.
Important Notice and Disclaimer
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相关代理商/技术参数
参数描述
GBJ808-BP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Rectifier Bridge Single 800V 8A 4-Pin(4+Tab) GBJ Bulk
GBJ808-F 功能描述:桥式整流器 8.0A 800V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
GBJ810 功能描述:桥式整流器 1000V 8A RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube
GBJ810-BP 制造商:Micro Commercial Components (MCC) 功能描述:Diode Rectifier Bridge Single 1KV 8A 4-Pin(4+Tab) GBJ Bulk
GBJ810-F 功能描述:桥式整流器 1000V 8A RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube