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参数资料
| 型号： | GBU802 |
| 厂商： | DIODES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| 中文描述： | 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, GBU, 4 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 66K |
| 代理商： | GBU802 |
Notes:
5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
DS21227 Rev. 7 - 2
2 of 3
GBU8005 - GBU810
www.diodes.com
0.1
1.0
10
100
0.2
0.0
0.6
1.0
1.8
I
,
INST
ANT
A
NEOUS
FOR
W
A
RD
CURRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2 Typical Forward Characteristics, per element
F
T= 25 C
j
°
1.4
0
100
200
250
1
10
100
I
,
PEAK
FOR
W
A
RD
SURGE
CURRENT
(A)
FSM
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
Single Half-Sine Wave
T= 25 C
j
°
0
2
4
6
8
10
0
50
100
150
I
,
A
VERAGE
FOR
W
A
RD
RECTIFIED
CURRENT
(A)
(A
V)
T , CASE TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
C
°
Resistive or
Inductive Load
With heatsink
Without heatsink
10
100
1000
0.1
1.0
10
100
C
,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
V , REVERSE VOLTAGE (V)
Fig.4 Typical Total Capacitance, per element
R
T= 25 C
j
°
f = 1.0MHz
Ordering Information
Device
Packaging
Shipping
GBU8005
GBU
20/Tube
GBU801
GBU
20/Tube
GBU802
GBU
20/Tube
GBU804
GBU
20/Tube
GBU806
GBU
20/Tube
GBU808
GBU
20/Tube
GBU810
GBU
20/Tube
(Note 5)
相关PDF资料 |
PDF描述 |
|---|---|
| GBU804 | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBU806 | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBU808 | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBU810 | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBJ602 | 6.0A GLASS PASSIVATED BRIDGE RECTIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GBU8-02 | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS |
| GBU802 C2 | 制造商:SKMI/Taiwan 功能描述:Diode Rectifier Bridge Single 100V 8A 4-Pin Case GBU Tube |
| GBU802C | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:SILICON BRIDGE RECTIFIERS |
| GBU802-G | 功能描述:桥式整流器 VR=200V IAV=4.0A RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| GBU802-P | 制造商:Lite-On Electronics 功能描述:DISCRETE DIODE |
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