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参数资料
| 型号： | GFB70N03 |
| 厂商： | GE Security, Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET |
| 中文描述： | N沟道增强型MOSFET |
| 文件页数： | 3/5页 |
| 文件大小： | 102K |
| 代理商： | GFB70N03 |
0
10
20
30
50
60
70
0
0.5
1
1.5
2
2.5
Fig. 1 – Output Characteristics
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0
20
40
60
80
100
Fig. 4 – On-Resistance vs.
Drain Current
0
10
20
40
30
50
70
60
12
3
4
5
Fig. 2 – Transfer Characteristics
40
VGS = 2.5V
0.8
0.6
1.4
1.6
1.2
1
--50
--25
25
50
75
100
125
150
0
Fig. 5 – On-Resistance vs.
Junction Temperature
VGS = 10V
ID = 35A
VGS = 4.5V
25
°C
VGS = 10V
TJ = 125
°C
--55
°C
3.0V
3.5V
6.0V
4.0V
VDS = 10V
10V
0.6
1.4
1.2
1.6
1.8
0.8
1
--50
--25
25
50
75
100
125
150
0
Fig. 3 – Threshold Voltage vs.
Temperature
ID = 250
A
I D
-
-Drain
Source
Current
(A)
VDS -- Drain-to-Source Voltage (V)
R
DS(ON)
-
-On-Resistance
(
)
ID -- Drain Current (A)
I D
-
-Drain
Current
(A)
VGS -- Gate-to-Source Voltage (V)
R
DS(ON)
-
-On-Resistance
(Normalized)
TJ -- Junction Temperature (
°C)
V
GS(th)
-
Threshold
V
oltage
(V)
TJ -- Junction Temperature (
°C)
4.5V
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
GFB70N03
N-Channel Enhancement-Mode MOSFET
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