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参数资料
| 型号： | GFB70N03 |
| 厂商： | GE Security, Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET |
| 中文描述： | N沟道增强型MOSFET |
| 文件页数： | 5/5页 |
| 文件大小： | 102K |
| 代理商： | GFB70N03 |
36
35
37
39
40
38
--50
--25
25
50
75
100
125
0
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
150
ID = 250
A
BV
DSS
-
-Breakdown
V
oltage
(V)
TJ -- Junction Temperature (
°C)
Fig. 13 – Maximum Safe Operating Area
0.0001
0.001
0.01
0.1
1
10
I D
-
-Drain
Current
(A)
VDS -- Drain-Source Voltage (V)
Fig. 11 – Thermal Impedance
R
Θ
JA
(norm)
-
-Normalized
Thermal
Impedance
Pulse Duration (sec.)
Single Pulse
0.001
0.0001
0.01
0.1
0
0.1
1
10
100
1000
10
100
200
400
600
800
1000
110
Fig. 12 – Power vs. Pulse Duration
Power
(W)
Pulse Duration (sec.)
Single Pulse
R
θJC = 2.0°C/W
TC = 25°C
VGS = 10V
Single Pulse
RΘJC = 2.0 C/W
TC = 25
°C
RDS
(ON)
Limit
100
s
1ms
10ms
DC
D = 0.5
0.2
0.1
t1
t2
PDM
1. Duty Cycle, D = t1/t2
2. R
θJC (t) = RθJC(norm) *RθJC
3. R
θJC = 2.0°C/W
4. TJ - TC = PDM * R
θJC (t)
0.05
100ms
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
GFB70N03
N-Channel Enhancement-Mode MOSFET
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