参数资料
型号: GI758-E3/54
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 73K
描述: 6A 800 PIV SILICON RECT P600
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 800V
电流 - 平均整流 (Io): 6A
电压 - 在 If 时为正向 (Vf)(最大): 950mV @ 6A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2.5µs
电流 - 在 Vr 时反向漏电: 5µA @ 800V
安装类型: 通孔
封装/外壳: P600,轴向
供应商设备封装: P600
包装: 剪切带 (CT)
其它名称: GI758-E3/54GICT
GI758/4CT
GI758/4CT-ND
GI758CT
GI758CT-ND
‘? I G|750, GI751, G|752, GI754, G|756, G|7587 Www'V'Shay'C°m Vishay General Semiconductor
THERMAL cHARAcTERls cs (TA = 25 00 unless otherwise noted)
N ateU) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted with 1.1 “ x 1.1 "(30 mm X 30 mm) Copper pads
ORDER NC INFORMAT on (Example)
PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODEI 13“ diameter paper tape and reel1 Ammo packpackaging
RATINGS AND CHARACTERISTICS CuRvEs (TA = 25 (‘C unless otherwise noted)
5.0
1000
60 Hz Resistive7'0 or inductive Load
60
5.0
4.0
3.0
2.0
VRRM may be Applied BetweenEach Cycle o1Surge.It1e TJNoted ls TJ Prior to Surge
Peak Fonlvard surge Current (A)
é
1.1“xl.l“(3UmmX3Umm)‘>0 Copper Fads
Average FonNard Rectilied Current (A)
0 100 20 40 60 E0 100 120 140 160 150 200
Ambient Temperature (Dc) Number of Cycles at 60 HZ
Fig. 1 — Maximum Forward Current Derating Curve Fig. 3 — Maximum Peak FonNard Surge Current
100
Pulse Width 7 300 us1 % Duty Cycle
3
on
Average FonNard Current (A)
instantaneous Forward Current (A)
0.010 20 40 50 so 100 120 140 160 180 200 05 0.5 1.0 1.2 14 16 15
Lead Temperature (°C) Instantaneous Fonrvard Voltage (\I)
Fig. 2 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 01-Aug-13 2 Document Number: 88627
For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiQdesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
PDF描述
VJ1210A102JXGAT5Z CAP CER 1000PF 1KV 5% NP0 1210
AMM24DRTF CONN EDGECARD 48POS DIP .156 SLD
IDT71T75902S75BGGI IC SRAM 18MBIT 75NS 119BGA
T86C156M6R3ESAS CAP TANT 15UF 6.3V 20% 2312
ECM15DCWI CONN EDGECARD 30POS DIP .156 SLD
相关代理商/技术参数
参数描述
GI772 制造商:GTM 制造商全称:GTM 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
GI7805 制造商:GTM 制造商全称:GTM 功能描述:3-TERMINAL POSITIVE VOLTAGE REGULATORS
GI7805A 制造商:GTM 制造商全称:GTM 功能描述:3-TERMINAL POSITIVE VOLTAGE REGULATORS
GI7806 制造商:GTM 制造商全称:GTM 功能描述:3-TERMINAL POSITIVE VOLTAGE REGULATORS
GI7806A 制造商:GTM 制造商全称:GTM 功能描述:3-TERMINAL POSITIVE VOLTAGE REGULATORS