参数资料
型号: GI758-E3/54
厂商: Vishay General Semiconductor
文件页数: 3/3页
文件大小: 73K
描述: 6A 800 PIV SILICON RECT P600
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 800V
电流 - 平均整流 (Io): 6A
电压 - 在 If 时为正向 (Vf)(最大): 950mV @ 6A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2.5µs
电流 - 在 Vr 时反向漏电: 5µA @ 800V
安装类型: 通孔
封装/外壳: P600,轴向
供应商设备封装: P600
包装: 剪切带 (CT)
其它名称: GI758-E3/54GICT
GI758/4CT
GI758/4CT-ND
GI758CT
GI758CT-ND
‘lllvVISHAYQ7 www.vishay.com
I00
0
Instantaneous Reverse Current (IIA)
:3
0 oi0 20 40 60 80 mo
Percent of Rated Peak Reverse Voltage (°/6)
Fig. 5 - Typical Reverse Characteristics
G|750, GI751, G|752, GI754, G|756, G|758
Vishay General Semiconductor
IOU
ri ed on(5 0 mm x 7 0 mm)C pper Pad Areas
I0
Transient Thermal impedance (“C/W)
D‘ I‘ I||||I IIIIIII I|||||I
1 10
t- Pulse Duration (s)Fig. 6 - Typical Transient Thermal Impedance
PACKAGE ouTLINE DIMENSIONS in inches (miiiimeters)
0.360 (9.1)7
0.640 (8 6)0.052 (1.32)
0.040 (1.22)
Revision: 01-Aug-133 Document Number: 88627
P600
1.0 (25.4)
MIN.
0.360 (9.1)
0 340 (8.6)
l
T
9 + 1.0 (25.4)
MIN.
For technical questions within your region: DiodesArnericas@vishay.c0m, DiodesAsia@vishay.com, DiQdesEurope@Vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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