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参数资料
| 型号： | GL480E00000F |
| 厂商： | Sharp Microelectronics |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | EMITTER IR 950NM 3.0MW TH |
| 产品变化通告： | Emitter Chip Change 10/Aug/2007 |
| 标准包装： | 1,000 |
| 电流 - DC 正向(If)： | 100mA |
| 波长： | 950nm |
| 正向电压： | 1.2V |
| 视角： | 26° |
| 方向： | 侧视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | 径向 |
| 包装： | 管件 |
| 其它名称： | 425-1940-5 |
GL480E00000F
■ Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Forward current
Peak forward current *1
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Soldering temperature *2
Symbol
I F
I FM
V R
P
Topr
Tstg
Tsol
Rating
50
1
6
75
-25 to + 8 5
-40 to + 8 5
260
Unit
mA
A
V
mW
°C
°C
°C
* 1 2 5 s (MAX.) positioned 1.4 mm from the resin edge. See Figure 11.
Pulse width: 100 μs, Duty ratio: 0.01
*
■ Electro-optical Charactertistics
Parameter
Forward voltage
Peak forward voltage
Reverse current
Radiant flux
Peak emission wavelength
Half intensity wavelength
Terminal capacitance
Response frequency
Angle of half intensity
Symbol
V F
V FM
I R
Φ e
λ p
Δλ
C t
f C
Δθ
Conditions
I F = 20 mA
I FM = 0.5 A
V R = 3 V
I F = 20 mA
I F = 5 mA
I F = 5 mA
V R = 0, f = 1 MHz
–
I F = 20 mA
MIN.
–
–
–
0.7
–
–
–
–
–
TYP.
1.2
3.0
–
–
950
45
50
300
±13
MAX.
1.4
4.0
10
3.0
–
–
–
–
–
Unit
V
V
μA
mW
nm
nm
pF
kHz
degrees
Fig. 1 Forward Current vs.
Fig. 2 Peak Forward Current vs. Duty Ratio
60
50
Ambient Temperature
10,000
5,000
2,000
P u lse w idth ≤ 100 μ s
T a = 25°C
1,000
40
30
20
10
500
200
100
50
20
0
-25
0
25
50
75 85
100
10
10 -3 2
5 10 -2
2 5 10 -1
D u ty ratio
2
5
1
Am b ient temperat u re T a (°C)
Sheet No.: D1-A01101EN
3
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