参数资料
型号: GL480E00000F
厂商: Sharp Microelectronics
文件页数: 6/9页
文件大小: 0K
描述: EMITTER IR 950NM 3.0MW TH
产品变化通告: Emitter Chip Change 10/Aug/2007
标准包装: 1,000
电流 - DC 正向(If): 100mA
波长: 950nm
正向电压: 1.2V
视角: 26°
方向: 侧视图
安装类型: 通孔
封装/外壳: 径向
包装: 管件
其它名称: 425-1940-5
GL480E00000F
■ Design Considerations
Design Guidelines
1. Allow for natural degradation of the LED as a result of long continuous operation. This part will have 50 % deg-
radation in output after 5 years of continuous use.
2. This product is not designed to be electromagnetic- and ionized-particle-radiation resistant.
■ Manufacturing Guidelines
Cleaning Instructions
1. Confirm this device's resistance to process chemicals before use, as certain process chemicals may affect the
optical characteristics.
2. Solvent cleaning: Solvent temperature should be 45°C or below. Immersion time should be 3 minutes or less.
3. Ultrasonic cleaning: The effect upon devices varies due to cleaning bath size, ultrasonic power output, cleaning
time, PCB size and device mounting circumstances. Sharp recommends testing using actual production condi-
tions to confirm the harmlessness of the ultrasonic cleaning methods.
4. Recommended solvent materials: Ethyl alcohol, Methyl alcohol, and Isopropyl alcohol.
Fig. 11 Soldering Area
1.4 mm
Soldera b le
■ Packing Specifications
1. Parts are packed in a vinyl bag, at an average quantity of 1,000 pieces per bag.
2. Bags are secured in a box as shown in illustration on page 8 .
3. Product mass: 0.09 g (approx.)
Sheet No.: D1-A01101EN
6
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