参数资料
型号: GLT5640L32-10
厂商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous DRAM 2M x 32 SDRAM
中文描述: 200万的CMOS同步DRAM × 32内存
文件页数: 17/72页
文件大小: 2315K
代理商: GLT5640L32-10
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 17 -
5.1 Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0, binary)
(decimal)
Sequential Addressing Sequence
(decimal)
Interleave Addressing Sequence
0
1
0, 1
1, 0
0, 1
1, 0
(Burst of Four)
Starting Address
(column address A1 - A0, binary)
00
01
10
11
Sequential Addressing Sequence
(decimal)
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
Interleave Addressing Sequence
(decimal)
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
(Burst of Eight)
Starting Address
(column address A2 - A0, binary)
(decimal)
000
001
010
011
100
101
110
111
Full page burst is an extension of the above tables of sequential addressing, with the length being 256 for 4Mx16.
Sequential Addressing Sequence
(decimal)
Interleave Addressing Sequence
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7, 0
2, 3, 4, 5, 6, 7, 0, 1
3, 4, 5, 6, 7, 0, 1 ,2
4, 5, 6, 7, 0, 1, 2, 3
5, 6 ,7, 0, 1, 2, 3, 4
6, 7 ,0 ,1 ,2 ,3 ,4 ,5
7, 0, 1, 2, 3, 4, 5, 6
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
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