参数资料
型号: GLT5640L32-10
厂商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous DRAM 2M x 32 SDRAM
中文描述: 200万的CMOS同步DRAM × 32内存
文件页数: 8/72页
文件大小: 2315K
代理商: GLT5640L32-10
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 8 -
Switching Characteristics (Ta = 0 ~ 70°C, V
DD
= V
DDQ
= 3.3
±
0.3V , V
SS
= V
SSQ
= 0V, unless otherwise noted)
Limits
-6
Min
6
8
2.5
2.5
1
1.5
1
60
60
18
42
18
12
12
2
5
5.5
-7
Parameter
Symbol
Min
5.5
-
2.3
2.3
1
1.5
1
55
55
16.5
38.5
16.5
11
11
2
5
Max
Max
Min
7
9
2.5
2.5
1
1.5
1
63
70
21
45
21
14
14
2
5
Max
Unit
Note
CLK cycle time
CL=3
CL=2
t
CK3
t
CK2
t
CH
t
CL
t
T
t
IS
t
IH
t
RC
t
RFC
t
RCD
t
RAS
t
RP
t
WR
t
RRD
t
RSC
t
DAL
t
REF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
CK
t
CK
ms
CLK high pulse width
CLK low pulse width
Transition time of CLK
Input Setup time
Input Hold time
Row Cycle Time
Refresh Cycle Time
Row to Column Delay
Row active time
Row Precharge time
Write Recovery time
Act to Delay time
Mode Register Set Cycle time
Data-in to ACTIVE command
Refresh Interval time
Note :
1.
t
IS
= t
CKS
(CKE setup time) , t
CMS
(Command setup time) , t
AS
(Address setup time) , t
DS
(Input data setup time).
2.
t
IH
= t
CKH
(CKE hold time) , t
CMH
(Command hold time) , t
AH
(Address hold time) , t
DH
(Input data hold time).
3.
t
WR
is so called t
DPL
.
10
10
10
1
2
100k
100k
100k
3
64
64
64
Switching Characteristics (Ta = 0 ~ 70°C, V
DD
= V
DDQ
= 3.3
±
0.3V , V
SS
= V
SSQ
= 0V, unless otherwise noted)
Limits
-6
Min
-5.5
-7
Unit
Note
Parameter
Symbol
Min
Max
5
6
Max
5
6
Min
Max
5.5
6
CL = 3
CL = 2
CL = 3
CL = 2
t
AC3
t
AC2
t
CH3
t
CH2
t
OLZ
ns
ns
ns
ns
ns
*1
*1
*1
*1
Access time from CLK
2
2
0
2.5
2.5
0
2.5
2.5
0
Output Hold time from CLK
Delay time , output low-impedance
from CLK
Delay time , output high-impedance
from LCK
Note :
1.
If clock rising time is longer than 1ns, (tr/2-0.5ns) should be added to the parameter.
t
OHZ
2
5
2.5
5
2.5
5.5
ns
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