参数资料
型号: GM72V66841CLT
厂商: Electronic Theatre Controls, Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4个银行同步动态RAM
文件页数: 7/57页
文件大小: 592K
代理商: GM72V66841CLT
LG Semicon
GM72V66841CT/CLT
6
DQM Truth Table
Function
Write enable/output enable
Write inhibit/output disable
Symbol
ENB
MASK
n-1
CKE
DQM
n
H
H
X
X
L
H
The GM72V66841CT/CLT can mask input/output
data by means of DQM.
During reading, the output buffer is set to Low-Z
by setting DQM to Low, enabling data output. On
the other hand, when DQM is set to High, the
output buffer becomes High-Z, disabling data
output.
During writing, data is written by setting DQM to
Low. When DQM is set to High, the previous
data is held (the new data is not written). Desired
data can be masked during burst read or burst
write by setting DQM. For details, refer to the
DQM
control
GM72V66841CT/CLT operating instructions.
section
of
the
* Notes : H: V
IH
, L: V
IL
, X: V
IH
or V
IL
.
Write : l
DID
is needed.
Read : l
DOD
is needed.
相关PDF资料
PDF描述
GM72V66841CT 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7J 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-8 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
相关代理商/技术参数
参数描述
GM72V66841CT 制造商:未知厂家 制造商全称:未知厂家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841CT/CLT 制造商:未知厂家 制造商全称:未知厂家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx8|3.3V|4K|75|SDR SDRAM - 64M
GM72V66841ELT-10K 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM