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参数资料
| 型号： | GM72V66841CLT |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2097152字× 8位× 4个银行同步动态RAM |
| 文件页数： | 9/57页 |
| 文件大小： | 592K |
| 代理商： | GM72V66841CLT |
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LG Semicon
GM72V66841CT/CLT
Self-refresh exit[SELFX]:
When this command
is executed during self-refresh mode, the
synchronous DRAM can exit from self-refresh
mode. After exiting from self-refresh mode, the
synchronous DRAM enters the IDLE state.
Power down mode entry:
When this command
is executed during the IDLE state, the
synchronous DRAM enters Power down mode.
In Power down mode, Power consumption is
suppressed by cutting off the initial input circuit.
Power down exit:
When this command is
executed at the Power down mode, the
synchronous DRAM can exit from Power down
mode. After exiting from Power down mode, the
synchronous DRAM enters the IDLE state.
Auto-refresh command[REF]:
When this
command is input from the IDLE state, the
synchronous
DRAM
operation. (The auto-refresh is the same as the
CBR refresh of conventional DRAMs.) During
the auto-refresh operation, refresh address and
bank select address are generated inside the
synchronous DRAM. For every auto-refresh
cycle, the internal address counter is updated.
Accordingly, 4,096 times are required to refresh
the entire memory. Before executing the auto-
refresh command, all the banks must be in the
IDLE state. In addition, since the Precharge for
all banks is automatically performed after auto-
refresh, no Precharge command is required after
auto-refresh.
starts
auto-refresh
Self-refresh entry[SELF]:
When this command
is input during the IDLE state, the synchronous
DRAM starts self-refresh operation. After the
execution
of
this
continues while CKE is Low. Since self-refresh
is
performed
internally
external refresh operations are unnecessary.
command,
self-refresh
and
automatically,
Function Truth Table
The following table shows the operations that are performed when each command is issued in each
mode of the synchronous DRAM.
Current
state
Precharge
CS
RAS
CAS
WE
Address
H
X
X
X
X
L
H
H
H
X
L
H
H
L
X
L
H
L
H
BA, CA, A10
L
H
L
L
BA, CA, A10
L
L
H
H
BA, RA
L
L
H
L
BA, A10
Command
Operation
DESL
NOP
BST
READ/READ A
WRIT/WRIT A
ACTV
PRE, PALL
Enter IDLE after
t
RP
Enter IDLE after
t
RP
NOP
ILLEGAL
ILLEGAL
ILLEGAL
NOP
8
相关PDF资料 |
PDF描述 |
|---|---|
| GM72V66841CT | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-7J | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-7K | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-8 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GM72V66841CT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841CT/CLT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:8Mx8|3.3V|4K|75|SDR SDRAM - 64M |
| GM72V66841ELT-10K | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-7 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
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