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参数资料
| 型号： | GMBT4403 |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 215K |
| 代理商： | GMBT4403 |
CORPORATION
1/2
ISSUED DATE :2001/09/20
REVISED DATE :2006/02/08B
GM BT4403
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBT4403 is designed for general purpose applications requiring high breakdown voltage.
Features
&High DC Current Gain: 100-300 at 150mA
&Complementary to GMBT4401
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0°
10°
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
:
Storage Temperature
Tstg
-55 ~ +150
:
Collector to Base Voltage
VCBO
-40
V
Collector to Emitter Voltage
VCEO
-40
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-600
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25 : , unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
V
IC=-100uA
BVCEO
-40
-
V
IC=-1mA
BVEBO
-5
-
V
IE=-10uA
ICEX
-
-100
nA
VCE=-35V, VBE=-0.4V
*VCE(sat)1
-
-400
mV
IC=-150mA, IB=-15mA
*VCE(sat)2
-
-750
mV
IC=-500mA, IB=-50mA
*VBE(sat)1
-
-950
mV
IC=-150mA, IB=-15mA
*VBE(sat)2
-
-1.3
V
IC=-500mA, IB=-50mA
*hFE1
30
-
VCE=-1V, IC=-0.1mA
*hFE2
60
-
VCE=-1V, IC=-1mA
*hFE3
100
-
VCE=-1V, IC=-10mA
*hFE4
100
-
300
VCE=-2V, IC=-150mA
*hFE5
20
-
VCE=-2V, IC=-500mA
fT
200
-
MHz
VCE=-10V, IC=-20mA, f=100MHz
Cob
-
8.5
pF
VCE=-10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
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