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参数资料
| 型号： | GMBTA14 |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 204K |
| 代理商： | GMBTA14 |
CORPORATION
1/2
ISSUED DATE :2002/02/11
REVISED DATE :2006/05/09B
GM BTA14
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L S
S II L
L II C
C O
O N
N T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBTA14 is designed for Darlington Amplifier Transistor.
Features
*High D.C. Current Gain
*Collector-Emitter Voltage VCES=30V
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0°
10°
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
:
Storage Temperature
Tstg
-55 ~ +150
:
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCES
30
V
Emitter to Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25 : ,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
V
IC=100uA ,IE=0
BVCES
30
-
V
IC=100uA ,VBE=0
BVEBO
10
-
V
IE=10uA ,IC=0
ICBO
-
100
nA
VCB=30V, IE = 0
IEBO
-
100
nA
VEB=10V, Ic = 0
*VCE(sat)
-
1.5
V
IC=100mA, IB=0.1mA
*VBE(on)
-
2.0
V
VCE=5V, IC=100mA
*hFE1
10k
-
VCE=5V, IC=10mA
*hFE2
20k
-
VCE=5V, IC=100mA
fT
125
-
MHz
VCE=5V, IC=10mA, f=100MHz
Cob
-
6
pF
VCB=10V, IE=0, f=1MHz
Pulse Test: Pulse Width 380us, Duty Cycle
%
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