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参数资料
| 型号： | GMPSA27 |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN SILICON DARLINGTON TRANSISTOR |
| 中文描述： | NPN硅达林顿晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 240K |
| 代理商： | GMPSA27 |
CORPORATION
!
1/2
ISSUED DATE :2004/08/12
REVISED DATE :2004/11/29B
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
GM PSA27
N
N P
P N
N S
S II L
L II C
C O
O N
N D
D A
A R
R L
L II N
N G
G T
T O
O N
N T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMPSA27 is designed for darlington applications requiring extremely high current gain at collector to 500mA.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCES
60
V
Emitter to Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
625
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
V
IC=100uA ,IE=0
BVCES
60
-
V
IC=100uA ,VBE=0
BVEBO
10
-
V
IE=10uA ,IC=0
ICBO
-
100
nA
VCB=50V, IE = 0
ICES
-
500
nA
VCE=50V
IEBO
-
100
nA
VEB=10V, Ic = 0
*VCE(sat)
-
1.5
V
IC=100mA, IB=0.1mA
VBE(on)
-
2
V
VCE=5V ,IC=100mA
*hFE1
10K
-
VCE=5V, IC=10mA
*hFE2
10K
-
VCE=5V, IC=100mA
Pulse Test: Pulse Width 380us, Duty Cycle 2%
TO-92
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