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参数资料
| 型号： | GP400DDS12 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Powerline N-Channel Dual Switch IGBT Module |
| 中文描述： | 电力线N沟道双开关IGBT模块 |
| 文件页数： | 5/10页 |
| 文件大小： | 100K |
| 代理商： | GP400DDS12 |
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/10
INDUCTIVE SWITCHING CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
Symbol
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
Conditions
ns
mJ
1300
200
170
130
150
-
Parameter
Min.
Typ.
Max.
Units
1100
t
f
t
d(on)
Turn-on delay time
ns
900
-
800
Rise time
E
ON
Turn-on energy loss
ns
mJ
400
130
90
320
-
t
r
I
C = 400A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 3.3
L ~ 100nH
T
case =
125C unless stated otherwise.
T
case = 25C unless stated otherwise
Q
rr
Diode reverse recovery charge
C
50
30
-
Q
rr
Diode reverse recovery charge
C
-
170
-
I
F = 400A
V
R = 50%VCES,
dI
F/dt = 2000A/s
t
d(off)
Turn-off delay time
Fall time
E
OFF
Turn-off energy loss
ns
mJ
1500
250
170
200
-
1300
t
f
t
d(on)
Turn-on delay time
ns
1200
-
950
Rise time
E
ON
Turn-on energy loss
ns
mJ
450
200
150
350
-
t
r
I
C = 400A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 3.3
L ~ 100nH
Q
rr
Diode reverse recovery charge
C
70
50
-
Q
rr
Diode reverse recovery charge
C
-
225
-
I
F = 400A
V
R = 50%VCES,
dI
F/dt = 2000A/s
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