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参数资料
| 型号： | GP400DDS12 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Powerline N-Channel Dual Switch IGBT Module |
| 中文描述： | 电力线N沟道双开关IGBT模块 |
| 文件页数： | 7/10页 |
| 文件大小： | 100K |
| 代理商： | GP400DDS12 |
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
6/10
CURVES
Fig.5 Typical output characteristics
Fig.6 Typical output characteristics
Fig.7 Typical turn-on energy vs collector current
Fig.8 Typical turn-on energy vs collector current
0
100
200
300
600
700
800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Collector
current,
I
C
-
(A)
Vge = 20/15/12/10V
Common emitter
Tcase = 25C
500
400
0
100
200
300
600
700
800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Collector
current,
I
C
-
(A)
Vge = 20/15/12/10V
Common emitter
Tcase = 125C
500
400
0
10
20
30
40
50
60
70
80
0
50
100
150
200
250
300
350
400
Collector current, IC - (A)
T
urn-on
energy
,E
on
-
(mJ)
A : Rg = 15
B : Rg = 10
C : Rg = 5
A
B
C
Conditions:
Tcase = 25C,
VCE = 600V,
VGE = ±15V
0
10
20
30
40
50
60
70
80
90
100
110
0
50
100
150
200
250
300
350
400
Collector current, IC - (A)
T
urn-on
energy
,E
on
-
(mJ)
A : Rg = 15
B : Rg = 10
C : Rg = 5
A
B
C
Conditions:
Tcase = 125C,
VCE = 600V,
VGE = ±15V
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