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参数资料
| 型号： | GP9962 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 343K |
| 代理商： | GP9962 |
2/4
ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
40
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.1
-
V/ :
Reference to 25 : , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
11
-
S
VDS=10V, ID=7A
Gate-Source Leakage Current
IGSS
-
D100
nA
VGS= D20V
Drain-Source Leakage Current(Tj=25 : )
-
1
uA
VDS=40V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
25
uA
VDS=32V, VGS=0
-
28
VGS=10V, ID=7A
Static Drain-Source On-Resistance2
RDS(ON)
-
40
m
VGS=4.5V, ID=5A
Total Gate Charge2
Qg
-
13
20
Gate-Source Charge
Qgs
-
4
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
nC
ID=7A
VDS=32V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
10
-
Rise Time
Tr
-
8
-
Turn-off Delay Time
Td(off)
-
26
-
Fall Time
Tf
-
9
-
ns
VDS=20V
ID=1A
VGS=10V
RG=3.3
RD=20
Input Capacitance
Ciss
-
1170
1870
Output Capacitance
Coss
-
180
-
Reverse Transfer Capacitance
Crss
-
116
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=1.7A, VGS=0V
Reverse Recovery Time2
Trr
-
24
-
ns
Reverse Recovery Charge
Qrr
-
18
-
nC
IS=7A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90 : /W when mounted on Min. copper pad.
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