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参数资料
| 型号： | GP9962 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 3/4页 |
| 文件大小： | 343K |
| 代理商： | GP9962 |
3/4
ISSUED DATE :2005/08/08
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GP9973 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| GPA M32 | 制造商:FIBOX 功能描述:Cable Gland Polyamide (Metric) |
| GPA M32-B | 制造商:FIBOX 功能描述:Cable Gland Polyamide Locknut (Metric) |
| GPA M40 | 制造商:FIBOX 功能描述:Cable Gland Polyamide (Metric) |
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