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参数资料
| 型号： | GS2N7002K |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 301K |
| 代理商： | GS2N7002K |
GS2N7002K
Page: 1/4
ISSUED DATE :2005/09/19
REVISED DATE :
G
G S
S 22N
N 77000022K
K
N
N -- C
C H
H A
A N
N N
N E
E L
L E
E N
N H
H A
A N
N C
C E
E M
M E
E N
N T
T M
M O
O D
D E
E P
P O
O W
W E
E R
R M
M O
O S
S F
F E
E T
T
Description
The GS2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GS2N7002K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current3, VGS@10V
ID @TA=25 :
640
mA
Continuous Drain Current3, VGS@10V
ID @TA=70 :
500
mA
Pulsed Drain Current1,2
IDM
950
mA
Power Dissipation
PD @TA=25 :
0.35
W
Linear Derating Factor
0.003
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
360
/W
BVDSS
60V
RDS(ON)
2
ID
640mA
Pb Free Plating Product
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