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参数资料
| 型号： | GS78108AGB-12IT |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 1M X 8 STANDARD SRAM, 12 ns, PBGA119 |
| 封装： | 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119 |
| 文件页数： | 9/12页 |
| 文件大小： | 351K |
| 代理商： | GS78108AGB-12IT |
tAA
tOH
tRC
Address
Data Out
Previous Data
Data valid
GS78108AB
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04a 2/2007
6/12
2003, GSI Technology
Read Cycle 1:CE = OE = VIL
* These parameters are sampled and are not 100% tested
Write Cycle
Parameter
Symbol
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Write cycle time
tWC
8
—
10
—
12
—
ns
Address valid to end of write
tAW
5.5
—
7
—
8
—
ns
Chip enable to end of write
tCW
5.5
—
7
—
8
—
ns
Data set up time
tDW
4
—
5
—
6
—
ns
Data hold time
tDH
0
—
0
—
0
—
ns
Write pulse width
tWP
5.5
—
7
—
8
—
ns
Address set up time
tAS
0
—
0
—
0
—
ns
Write recovery time (WE)
tWR
0
—
0
—
0
—
ns
Write recovery time (CE)
tWR1
0
—
0
—
0
—
ns
Output Low Z from end of write
tWLZ*
3
—
3
—
3
—
ns
Write to output in High Z
tWHZ*
—
3.5
—
4
—
5
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GS78108AGB-15I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 8 8Mb Asynchronous SRAM |
| GS78108AGB-8 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 8 8Mb Asynchronous SRAM |
| GS78108AGB-8I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 8 8Mb Asynchronous SRAM |
| GS78108B | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 8 8Mb Asynchronous SRAM |
| GS78108B-10 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 8 8Mb Asynchronous SRAM |
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