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| 型号： | GS815018 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步静态RAM（带2位脉冲地址计数器）) |
| 中文描述： | 16Mb的（100万x 18位）同步突发静态存储器（1,600位（100万× 18位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 13/26页 |
| 文件大小： | 516K |
| 代理商： | GS815018 |
Rev: 1.02 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
13/26
2000, Giga Semiconductor, Inc.
Preliminary
GS815018/32/36T-225/200/180/166/150/133
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
°
C/W
°
C/W
°
C/W
Notes
Junction to Ambient (at 200 lfm)
single
40
1,2
Junction to Ambient (at 200 lfm)
four
24
1,2
Junction to Case (TOP)
—
9
3
20% tKC
V
SS
– 2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
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