- 您现在的位置：买卖IC网 > PDF目录383019 > GS815032 (GSI TECHNOLOGY) 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）) PDF资料下载
参数资料
| 型号： | GS815032 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）) |
| 中文描述： | 16Mb的（为512k × 32位）同步突发静态存储器（1,600位（512k × 32的位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 14/26页 |
| 文件大小： | 516K |
| 代理商： | GS815032 |
Rev: 1.02 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/26
2000, Giga Semiconductor, Inc.
Preliminary
GS815018/32/36T-225/200/180/166/150/133
AC Test Conditions
Notes:
1.
2.
3.
4.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Output Load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
Device is deselected as defined by the Truth Table.
Parameter
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Conditions
2.3 V
0.2 V
1 V/ns
1.25 V
1.25 V
Fig. 1& 2
DC Electrical Characteristics
Parameter
Input Leakage Current
(except mode pins)
Symbol
Test Conditions
Min
Max
I
IL
V
IN
= 0 to V
DD
–1 uA
1 uA
ZZ Input Current
I
INZZ
V
DD
≥
V
IN
≥
V
IH
0 V
≤
V
IN
≤
V
IH
V
DD
≥
V
IN
≥
V
IL
0 V
≤
V
IN
≤
V
IL
Output Disable,
V
OUT
= 0 to V
DD
I
OH
= – mA, V
DDQ
= 2.375 V
I
OH
= – mA, V
DDQ
= 3.135 V
I
OL
= mA
–1 uA
–1 uA
1 uA
300 uA
Mode Pin Input Current
I
INM
–300 uA
–1 uA
1 uA
1 uA
Output Leakage Current
I
OL
–1 uA
1 uA
Output High Voltage
V
OH
V
OH
V
OL
1.7 V
—
Output High Voltage
2.4 V
—
Output Low Voltage
—
0.4 V
DQ
VT = 1.25 V
50
30pF
*
DQ
2.5 V
Output Load 1
Output Load 2
225
225
5pF
*
* Distributed Test Jig Capacitance
相关PDF资料 |
PDF描述 |
|---|---|
| GS815036 | 16Mb（512K x 36Bit）Synchronous Burst SRAM(16M位（512K x 36位）同步静态RAM（带2位脉冲地址计数器）) |
| GS8150E18 | 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步静态RAM（带2位脉冲地址计数器）) |
| GS8150E32 | 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）) |
| GS8150E36 | 16Mb（512K x 36Bit）Synchronous Burst SRAM(16M位（512K x 36位）同步静态RAM（带2位脉冲地址计数器）) |
| GS8150F18 | 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步静态RAM（带2位脉冲地址计数器）) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS815036AB-250 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 2NS 119FPBGA - Trays |
| GS815036AB-250I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 2NS 119FPBGA - Trays |
| GS815036AB-300 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 1.6NS 119FPBGA - Trays |
| GS815036AB-300I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 1.6NS 119FPBGA - Trays |
| GS815036AB-333 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V 18MBIT 512KX36 1.5NS 119FBGA - Trays |
发布紧急采购，3分钟左右您将得到回复。