参数资料
型号: GS815036
厂商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
中文描述: 16Mb的(为512k × 36Bit)同步突发静态存储器(1,600位(为512k × 36位)同步静态随机存储器(带2位脉冲地址计数器))
文件页数: 10/26页
文件大小: 516K
代理商: GS815036
Rev: 1.02 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
10/26
2000, Giga Semiconductor, Inc.
Preliminary
GS815018/32/36T-225/200/180/166/150/133
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW)
control inputs and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs and
assumes ADSP is tied high and ADV is tied low.
3.
相关PDF资料
PDF描述
GS8150E18 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
GS8150E32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
GS8150E36 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
GS8150F18 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
GS8150F32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
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