参数资料
型号: GS815036
厂商: GSI TECHNOLOGY
英文描述: 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
中文描述: 16Mb的(为512k × 36Bit)同步突发静态存储器(1,600位(为512k × 36位)同步静态随机存储器(带2位脉冲地址计数器))
文件页数: 11/26页
文件大小: 516K
代理商: GS815036
Rev: 1.02 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
11/26
2000, Giga Semiconductor, Inc.
Preliminary
GS815018/32/36T-225/200/180/166/150/133
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相关PDF资料
PDF描述
GS8150E18 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
GS8150E32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
GS8150E36 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
GS8150F18 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
GS8150F32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步静态RAM(带2位脉冲地址计数器))
相关代理商/技术参数
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