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参数资料
| 型号： | GS8150E32 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）) |
| 中文描述： | 16Mb的（为512k × 32位）同步突发静态存储器（1,600位（512k × 32的位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 7/26页 |
| 文件大小： | 516K |
| 代理商： | GS8150E32 |
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
7/26
2000, Giga Semiconductor, Inc.
Preliminary
GS8150E18/32/36T-225/200/180/166/150/133
Mode Pin Functions
Note:
There is a pull-up device on the and FT pin and a pull-down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
BPR 1999.05.18
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
H
L
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
Output Register Control
FT
H or NC
L or NC
Power Down Control
ZZ
H
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
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PDF描述 |
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| GS8150E36 | 16Mb（512K x 36Bit）Synchronous Burst SRAM(16M位（512K x 36位）同步静态RAM（带2位脉冲地址计数器）) |
| GS8150F18 | 16Mb（1M x 18Bit）Synchronous Burst SRAM(16M位（1M x 18位）同步静态RAM（带2位脉冲地址计数器）) |
| GS8150F32 | 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）) |
| GS8150F36 | 16Mb（512K x 36Bit）Synchronous Burst SRAM(16M位（512K x 36位）同步静态RAM（带2位脉冲地址计数器）) |
| GS8150Z18 | 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水线式和流通型同步NBT静态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8150V18AB | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-250 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-250I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V18AB-300 | 制造商:GSI Technology 功能描述:GS8150V18AB-300 - Trays |
| GS8150V18AB-300I | 制造商:GSI Technology 功能描述:GS8150V18AB-300I - Trays |
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