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参数资料
| 型号： | GS8150F32 |
| 厂商： | GSI TECHNOLOGY |
| 英文描述： | 16Mb（512K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）) |
| 中文描述： | 16Mb的（为512k × 32位）同步突发静态存储器（1,600位（512k × 32的位）同步静态随机存储器（带2位脉冲地址计数器）） |
| 文件页数： | 15/23页 |
| 文件大小： | 456K |
| 代理商： | GS8150F32 |
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
15/23
2000, Giga Semiconductor, Inc.
Preliminary
GS8150F18/32/36T-7/8/8.5/10/11
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-7 ns
-7.5 ns
Min
10.0
—
3.0
-8 ns
-8.5 ns
Min
10.0
—
3.0
-10 ns
Min
10.0
—
3.0
-11 ns
Min
15.0
—
3.0
Unit
Min
8.5
—
3.0
Max
—
7
—
Max
—
7.5
—
Min
10.0
—
3.0
Max
—
8.0
—
Max
—
8.5
—
Max
—
10.0
—
Max
—
11.0
—
Flow
Through
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
3.0
—
ns
Clock HIGH Time
Clock LOW Time
1.3
1.5
—
—
1.3
1.5
—
—
1.3
1.5
—
—
1.3
1.5
—
—
1.5
1.7
—
—
1.7
2
—
—
ns
ns
Clock to Output in High-Z
tHZ
1
tOE
1.5
2.5
1.5
3.0
1.5
3.2
1.5
3.5
1.5
3.8
1.5
4.0
ns
G to Output Valid
—
2.5
—
3.2
—
3.2
—
3.5
—
3.8
—
4.0
ns
G to output in Low-Z
tOLZ
1
0
—
0
—
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ
1
tS
tH
—
2.5
—
3.0
—
3.2
—
3.5
—
3.8
—
4.0
ns
Setup time
Hold time
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
1.5
0.5
—
—
ns
ns
ZZ setup time
tZZS
2
5
—
5
—
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH
2
tZZR
1
—
1
—
1
—
1
—
1
—
1
—
ns
ZZ recovery
100
—
100
—
100
—
100
—
100
—
100
—
ns
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