参数资料
型号: GS815272
厂商: GSI TECHNOLOGY
英文描述: 16Mb(256K x 72Bit)S/DCD Sync Burst SRAM(16M位(256K x 72位)可选单/双循环取消同步静态RAM(带2位脉冲地址计数器))
中文描述: 16Mb的(256 × 72Bit)的S /双氰胺同步突发静态存储器(1,600位(256 × 72位)可选单/双循环取消同步静态随机存储器(带2位脉冲地址计数器))
文件页数: 13/38页
文件大小: 824K
代理商: GS815272
Rev: 1.01 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
13/38
2000, Giga Semiconductor, Inc.
Preliminary
GS815218/36/72B-225/200/180/166/150/133
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相关PDF资料
PDF描述
GS8152Z18 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水线式和流通型同步NBT静态RAM)
GS8152Z36 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水线式和流通型同步NBT静态RAM)
GS8152Z72 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水线式和流通型同步NBT静态RAM)
GS816018 16Mb(1M x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
GS816032 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
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