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参数资料
| 型号： | GS816018T-200 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 元件分类： | DRAM |
| 英文描述： | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 1M×18，512k×32，512k×36 18M位同步突发静态存储器 |
| 文件页数： | 14/28页 |
| 文件大小： | 810K |
| 代理商： | GS816018T-200 |
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Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Recommended Operating Temperatures
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
T
A
0
25
70
°
C
°
C
2
Ambient Temperature (Industrial Range Versions)
–
40
25
85
2
Note:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
C
IN
C
I/O
V
IN
= 0 V
V
OUT
= 0 V
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
R
Θ
JA
R
Θ
JC
40
°
C/W
°
C/W
°
C/W
1,2
Junction to Ambient (at 200 lfm)
four
24
1,2
Junction to Case (TOP)
—
9
3
20% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
相关PDF资料 |
PDF描述 |
|---|---|
| GS816018T-200I | Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 12.5x20 mm; Packaging: Bulk |
| GS816018T-225 | Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk |
| GS816018T-225I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-166I | Quad 2-input positive-NAND buffers with open collector outputs 14-SOIC 0 to 70 |
| GS816036T-200 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS816018T-200I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816018T-225 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816018T-225I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816018T-250 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816018T-250I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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