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参数资料
| 型号： | GS816018T-200I |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 12.5x20 mm; Packaging: Bulk |
| 中文描述： | 100万× 18，512k × 32的，为512k × 36 35.7同步突发静态存储器 |
| 文件页数： | 8/28页 |
| 文件大小： | 810K |
| 代理商： | GS816018T-200I |
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Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
8/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Byte Write Truth Table
Notes:
1.
2.
3.
4.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
A
, B
B
, B
C
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
C
” and “
D
” are only available on the x32 and x36 versions.
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
相关PDF资料 |
PDF描述 |
|---|---|
| GS816018T-225 | Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk |
| GS816018T-225I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-166I | Quad 2-input positive-NAND buffers with open collector outputs 14-SOIC 0 to 70 |
| GS816036T-200 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036T-200I | Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS816018T-225 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816018T-225I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816018T-250 | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816018T-250I | 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
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