参数资料
型号: GS816018T-250
厂商: Electronic Theatre Controls, Inc.
英文描述: Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 12.5x20 mm; Packaging: Bulk
中文描述: 100万× 18,512k × 32的,为512k × 36 35.7同步突发静态存储器
文件页数: 17/28页
文件大小: 810K
代理商: GS816018T-250
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
17/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-250
-225
-200
-166
-150
-133
Unit
Min
4.0
1.5
Max
2.5
Min
4.4
1.5
Max
2.7
Min
5.0
1.5
Max
3.0
Min
6.0
1.5
Max
3.4
Min
6.7
1.5
Max
3.8
Min
7.5
1.5
Max
4.0
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tS
tH
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
1.5
ns
Setup time
Hold time
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
1.2
0.2
5.5
3.0
5.5
1.3
0.3
6.0
3.0
6.0
1.4
0.4
6.5
3.0
6.5
1.5
0.5
7.0
3.0
7.0
1.5
0.5
7.5
3.0
7.5
1.5
0.5
8.5
3.0
8.5
ns
ns
ns
ns
ns
Flow
Through
Clock to Output in Low-Z
tLZ
1
tS
tH
tKH
tKL
3.0
3.0
3.0
3.0
3.0
3.0
ns
Setup time
Hold time
Clock HIGH Time
Clock LOW Time
Clock to Output in
High-Z
G to Output Valid
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.3
1.5
1.5
0.5
1.5
1.7
1.5
0.5
1.7
2
ns
ns
ns
ns
tHZ
1
1.5
2.3
1.5
2.5
1.5
3.0
1.5
3.0
1.5
3.0
1.5
3.0
ns
tOE
2.3
2.5
3.2
3.5
3.8
4.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
2.3
2.5
3.0
3.0
3.0
3.0
ns
ZZ setup time
tZZS
2
5
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
1
ns
ZZ recovery
20
20
20
20
20
20
ns
相关PDF资料
PDF描述
GS816018T-250I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-133I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-150I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
相关代理商/技术参数
参数描述
GS816018T-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays
GS816032BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays
GS816032BGT-150IT 制造商:GSI Technology 功能描述:512K X 32 (16 MEG) SYNCH BURST, SCD - Tape and Reel
GS816032BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays