参数资料
型号: GS816018T-250
厂商: Electronic Theatre Controls, Inc.
英文描述: Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 12.5x20 mm; Packaging: Bulk
中文描述: 100万× 18,512k × 32的,为512k × 36 35.7同步突发静态存储器
文件页数: 18/28页
文件大小: 810K
代理商: GS816018T-250
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
18/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Write Cycle Timing
CK
ADSP
ADSC
ADV
GW
BW
G
WR2
WR3
WR1
WR1
WR2
WR3
tKC
Single Write
Burst Write
D2
A
D2
B
D2
C
D2
D
D3
A
D1
A
t
KL
t
KH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
tS tH
Write specified byte for 2
A
and all bytes for 2
B
, 2
C
& 2
D
ADV must be inactive for ADSP Write
ADSC initiated write
ADSP is blocked by E inactive
A
0
An
B
A
B
D
DQ
A
DQ
D
Write
Deselected
Hi-Z
E
1
E
3
tS tH
tS tH
tS tH
E
2
and E
3
only sampled with ADSP or ADSC
E
1
masks ADSP
E
2
Deselected with E
2
相关PDF资料
PDF描述
GS816018T-250I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-133I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-150I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
相关代理商/技术参数
参数描述
GS816018T-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays
GS816032BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays
GS816032BGT-150IT 制造商:GSI Technology 功能描述:512K X 32 (16 MEG) SYNCH BURST, SCD - Tape and Reel
GS816032BGT-150IV 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays