参数资料
型号: GS816036T-225
厂商: Electronic Theatre Controls, Inc.
元件分类: DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突发静态存储器
文件页数: 6/28页
文件大小: 810K
代理商: GS816036T-225
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
6/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
GS816018/32/36 Block Diagram
A1
A0
A0
A1
D0
D1
Q1
Q0
Counter
Load
D
Q
D
Q
Register
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
Register
D
Q
R
D
Q
R
A0
An
LBO
ADV
CK
ADSC
ADSP
GW
BW
B
A
E
1
E
2
E
3
G
ZZ
Power Down
Control
Memory
Array
36
36
4
A
Q
D
DQx1
DQx9
Note: Only x36 version shown for simplicity.
1
B
B
B
C
B
D
FT
相关PDF资料
PDF描述
GS816036T-225I Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70
GS816036T-250 Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70
GS816036T-250I Quad 2-input positive-NAND buffers with open collector outputs 14-SO 0 to 70
GS8160E18 16Mb(1M x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器))
GS8160E32 16Mb(512K x 36Bit)Sync Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器))
相关代理商/技术参数
参数描述
GS816036T-225I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-250 制造商:未知厂家 制造商全称:未知厂家 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816036T-250I 制造商:GSI 制造商全称:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160E18BGT-150 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays
GS8160E18BGT-150I 制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 18MBIT 1MX18 7.5NS/3.8NS 100TQFP - Trays